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cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 1/ 12 MTC6322KS6R cystek product specification n- and p-channel logic level enhancement mode mosfet MTC6322KS6R features ? low on-resistance ? esd protected ? high speed switching ? low-voltage drive ? pb-free package equivalent circuit outline the following characteristics apply to both tr1 and tr2 absolute maximum ratings (t a =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 30 -30 v gate-source voltage v gs 8 8 v continuous drain current @t a =25 c, v gs =4.5v(-4.5v) i d 0.45 -0.45 a continuous drain current @t a =70 c, v gs =4.5v(-4.5v) i d 0.36 -0.36 a pulsed drain current (note 1) i dm 1.8 -1.8 a power dissipation @t a =25 c 0.30 power dissipation @t a =70 c p d 0.18 w operating junction and storage temperature range tj; tstg -55~+150 c note : 1. pulse width limited by maximum junction temperature. 2. pulse width 300 s, duty cycle 2%. 3.surface mounted on minimum pad of fr-4 board, t 5s. sot-363r MTC6322KS6R tr1 tr2 n-ch p-ch bv dss 30v -30v i d 0.45a -0.45a r dson (typ.) @v gs =(-)4.5v 0.86 0.98 r dson (typ.) @v gs =(-)2.7v 1.2 1.44
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 2/ 12 MTC6322KS6R cystek product specification thermal performance parameter symbol limit unit thermal resistance, junction- to-ambient(pcb mounted) (note) rth,ja 415 c/w note : surface mounted on minimum pad of fr-4 board, t 5s. n-channel electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0, i d =250 a v gs(th) 0.5 0.8 1.2 v v ds =v gs , i d =250 a i gss - - 5 v gs = 8v, v ds =0 - - 1 v ds =30v, v gs =0 i dss - - 10 a v ds =24v, v gs =0 (tj=70 c) - 0.86 1.2 v gs =4.5v, i d =450ma *r ds(on) - 1.2 1.6 v gs =2.7v, i d =300ma *g fs - 0.6 - s v ds =5v, i d =450ma dynamic ciss - 33.5 - coss - 6.1 - crss - 2.5 - pf v ds =15v, v gs =0, f=1mhz t d(on) - 3 - t r - 5 - t d(off) - 9 - t f - 5 - ns v ds =15v, i d =450ma, v gs =4.5v, r g =50 qg - 0.51 - qgs - 0.05 - qgd - 0.18 - nc v ds =15v, i d =450ma, v gs =4.5v source-drain diode *i s - - 0.45 *i sm - - 1.8 a *v sd - 0.9 1.2 v v gs =0v, i s =450ma *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 3/ 12 MTC6322KS6R cystek product specification p-channel electrical characteristics (tj=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -30 - - v v gs =0, i d =-250 a v gs(th) -0.5 -0.9 -1.2 v v ds =v gs , i d =-250 a i gss - - 5 v gs = 8v, v ds =0 - - -1 v ds =-30v, v gs =0 i dss - - -10 a v ds =-24v, v gs =0 (tj=70 c) - 0.98 1.3 v gs =-4.5v, i d =-450ma *r ds(on) - 1.44 1.9 v gs =-2.7v, i d =-300ma *g fs - 0.6 - s v ds =-5v, i d =-450ma dynamic ciss - 55.6 - coss - 9.3 - crss - 5.7 - pf v ds =-15v, v gs =0, f=1mhz t d(on) - 5 - t r - 6 - t d(off) - 15 - t f - 11 - ns v ds =-15v, i d =-450ma, v gs =-4.5v, r g =50 qg - 0.75 - qgs - 0.09 - qgd - 0.25 - nc v ds =-15v, i d =-450ma, v gs =-4.5v source-drain diode *i s - - -0.45 *i sm - - -1.8 a *v sd - -0.89 -1.2 v v gs =0v, i s =-450ma ordering information device package shipping marking MTC6322KS6R sot-363 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel 6322
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 4/ 12 MTC6322KS6R cystek product specification n-channel typical characteristics typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 012345 v ds , drain-source voltage(v) i d , drain current (a) 2.5v v gs =1.5v 2v 3v 3.5v 4v 5v, 4.5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0.01 0.1 1 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =2.7v v gs =1.8v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 i dr , reverse drain current (a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 0.5 1 1.5 2 2.5 3 3.5 4 012345678910 v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =220ma i d =190ma i d =100ma i d =50ma drain-source on-state resistance vs junction tempearture 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =2.7v, i d =190ma v gs =2.5v, i d =50ma v gs =4.5v, i d =220ma
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 5/ 12 MTC6322KS6R cystek product specification n-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs( th) , normalized threshold voltage i d =250 a single pulse power rating, junction to ambient (note on page 2) 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c r ja =415c/w gate charge characteristics 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =15v i d =450ma maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =4.5v, r ja =415c/w single pulse rds(on) limit maximum drain current vs junctiontemperature 0 0.1 0.2 0.3 0.4 0.5 0.6 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =415c/w
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 6/ 12 MTC6322KS6R cystek product specification n-channel typical characteristics(cont.) typical transfer characteristics 0 50 100 150 200 250 300 0 0.5 1 1.5 2 2.5 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v 150c 25c -40c 0c forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10 v v ds =5v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =415 c/w
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 7/ 12 MTC6322KS6R cystek product specification p-channel typical characteristics typical output characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 012345 -v ds , drain-source voltage(v) -i d , drain current (a) 2.5v -v gs =1.5v 2v 3v 3.5v 4v 5v, 4.5v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 0.01 0.1 1 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =4.5v -v gs =2.7v -v gs =1.8 v reverse drain current vs source-drain voltage 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 2 4 6 8 10 012345678910 -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-410ma i d =-250ma i d =-100ma drain-source on-state resistance vs junction tempearture 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-410ma v gs =-1.8v, i d =-100ma v gs =-2.7v, i d =-250ma
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 8/ 12 MTC6322KS6R cystek product specification p-channel typical characteristics(cont.) capacitance vs drain-to-source voltage 1 10 100 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) , normalized threshold voltage i d =-250 a single pulse power rating, junction to ambient (note on page 2) 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c r ja =415c/w gate charge characteristics 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-15v i d =-450ma maximum safe operating area 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c, v gs =-4.5v, r ja =415c/w single pulse r ds( on) limit maximum drain current vs junctiontemperature 0 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, r ja =415c/w
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 9/ 12 MTC6322KS6R cystek product specification p-channel typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 70 80 90 100 00.511.52 -v gs , gate-source voltage(v) -i d , drain current (ma) v ds =-10v 150c 25c -40c 0c forward transfer admittance vs drain current 0.01 0.1 1 0.001 0.01 0.1 1 -i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =-10v v ds =-5v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *z ja (t) 4.r ja =415 c/w
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 10/ 12 MTC6322KS6R cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 11/ 12 MTC6322KS6R cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised date : page no. : 12/ 12 MTC6322KS6R cystek product specification sot-363 dimension pin 6. drain marking: 6322 6-lead sot-363r plastic surface mounted package cystek package code: s6r style: pin 1. source1 (s1) pin 2. gate1 (g1) pin 3. drain2 (d2) pin 4. source2 (s2) pin 5. gate2 (g2) 1 (d1) millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.150 0.350 0.006 0.014 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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